2025 New Events

Quantum geometry in two-dimensional antiferromagnetic topological insulators

 

On January 21, 2025, at 10:00 AM, Prof. Anyuan Gao delivered a special report titled “Quantum Geometry Effects in Two-Dimensional Antiferromagnetic Topological Insulators” at the Shanghai Institute of Technical Physics, Chinese Academy of Sciences. The event was organized by the IEEE Electron Devices Society Optoelectronic Devices Committee and the IEEE Shanghai NTC Chapter, attracting considerable attention from the academic community and positively impacting IEEE’s academic exchanges and development.

Prof. Anyuan Gao is an associate professor at the Tsung-Dao Lee Institute of Shanghai Jiao Tong University. He received his Ph.D. from Nanjing University in 2019 and subsequently worked as a postdoctoral researcher at Harvard University from 2020 to 2024. In recognition of his outstanding contributions, Prof. Gao was selected for the Overseas Excellent Youth Program, the Shanghai Overseas High-level Talent Program, and the Pujiang Talent Program in 2023. He joined the Tsung-Dao Lee Institute at Shanghai Jiao Tong University in 2024.

During the report, Prof. Gao elaborated on the critical role of quantum geometry in defining the differences between the phase and amplitude of two quantum states. The phase difference of quantum states is described by the well-known Berry curvature, while the amplitude difference is characterized by the quantum metric. Through extensive studies of Berry curvature, scientists have successfully elucidated phenomena such as the anomalous Hall effect and various topological quantum phenomena. Based on this background, Prof. Gao explored an intriguing question: can the quantum metric also produce equally fascinating quantum phenomena?

In recent years, this query has garnered significant attention within the scientific community, leading to growing interest in quantum metric images. The emergence of two-dimensional materials has provided new avenues for detecting and controlling quantum geometric effects. Prof. Gao took the two-dimensional antiferromagnetic topological insulator MnBi₂Te₄ as an example to illustrate the remarkable quantum phenomena induced by quantum geometric effects:

  • Layer Hall Effect: An anomalous Hall effect driven by the Berry curvature arising from the layer distribution.
  • Quantum Metric Nonlinear Hall Effect: A nonlinear Hall effect induced by the quantum metric.

These studies not only uncover the profound influence of quantum geometric effects on electronic transport properties but also highlight the immense potential of two-dimensional materials in exploring novel quantum phenomena. By delving into the behavior of MnBi₂Te₄, researchers aim to provide deeper insights into how quantum geometry shapes the behavior of physical systems, paving the way for future advancements in quantum technology and device design.

Following the presentation, Prof. Gao toured SINOTEC’s advanced laboratory facilities and engaged in in-depth discussions with researchers. He shared valuable insights gained during his time at Harvard University and offered constructive suggestions on enhancing experimental accuracy and data processing efficiency. This visit promoted mutual learning in research methodologies and technical approaches, laying a solid foundation for future collaborations.

The report not only facilitated domestic academic exchanges and cooperation but also had a positive impact on IEEE’s activities. Through this event, IEEE strengthened its collaboration with domestic and international research institutions, promoting international academic exchange and technological progress. Prof. Gao’s research has been published in prestigious journals such as Nature, Science, with over 30 peer-reviewed papers and more than 3,000 citations. His work has significantly advanced the fields of quantum science and technology, providing valuable references and inspiration for researchers in related areas.

Through this report, Prof. Anyuan Gao showcased his latest advances in the study of quantum geometry effects, further solidifying his leadership in the field. Looking forward, he will continue to explore unknown territories, contributing to scientific progress.

Two-Dimensional Layered Bismuth Oxyselenides Crystals for Advanced Electronics/Optoelectronics

On January 4, 2025, at 9:00 AM, Dr. Weijun Wang from the Department of Materials Science and Engineering at City University of Hong Kong delivered a special report titled “Two-Dimensional Layered Bismuth Oxyselenides Crystals for Advanced Electronics/Optoelectronics”. The event was specially invited by the IEEE Shanghai NTC Chapter and IEEE Electron Devices Society, Optoelectric Devices Commitee, attracting considerable attention from the academic community and students, positively impacting their studies and research.

Dr. Weijun Wang received his Ph.D. in June 2024 from the Department of Materials Science and Engineering at City University of Hong Kong under the supervision of Prof. Johnny HO. Currently working as a postdoctoral researcher under Prof. HO, Dr. Wang’s research focuses on vapor-based growth methodologies for low-dimensional materials (nanowires and 2D materials) and device design and working mechanisms, especially for multifield-coupled devices. He has published 40 scientific research papers, including first-authored or cofirst-authored papers in top journals such as Nature Communications, Matter, and Advanced Materials.

During the report, Dr. Wang detailed how atomically thin two-dimensional (2D) materials are expected to extend the scaling limits of conventional silicon-based devices due to their planar structure, unique properties, and versatile device applications. To achieve controllable synthesis of large-area high-quality 2D materials with desired properties, his team developed a hydromechanical strategy using Simcenter STAR CMM+ simulation to regulate the coalescence process for high-quality large-scale 2D film synthesis. Through chemical vapor deposition (CVD), they synthesized self-strained ultrathin Bi₂O₂Se nanosheets with excellent semiconducting properties and robust ferroelectricity. The device-level interplay between ferroelectricity and opto/electronic characteristics was investigated using 2D Bi₂O₂Se ferroelectric semiconductor field-effect transistors (FeS-FETs). Additionally, highly efficient full-van der Waals 1D Te/2D Bi₂O₂Se heterodiodes were constructed, revealing a unique superlinear-to-sublinear photoresponse behavior. In summary, this study demonstrated the outstanding potential for robust 2D material synthesis with tuned properties, laying the foundation for high-performance 2D electronics/optoelectronic applications.

Following the presentation, Dr. Wang engaged in an interactive session with the attending students. He shared valuable experiences ranging from selecting research projects to experimental techniques and encouraged students to boldly explore unknown territories and cultivate independent thinking skills. This event not only broadened the students’ horizons and sparked their interest in cutting-edge technology but also provided them with invaluable academic resources and career development advice. Students expressed that through this report, they gained a deeper understanding of 2D materials research and had a clearer vision for their future research directions.

The report not only facilitated domestic academic exchanges and cooperation but also significantly enhanced students’ enthusiasm for learning and research. Through this event, IEEE strengthened its collaborations with domestic and international research institutions, promoting international academic exchange and technological progress. Dr. Weijun Wang’s research has been published in multiple top-tier international journals, accumulating over 40 peer-reviewed publications and widespread citations. His work has advanced the fields of electronic and optoelectronic device technologies, providing valuable references and inspiration for researchers in related areas.

2024 New Events

Semiconductor Nanowire Array Devices and Applications

 

On December 25, 2024, the IEEE NTC Shanghai Chapter had the honor of inviting Prof. Lan Fu, Professor and Head of the Department of Electronic Materials Engineering at the Research School of Physics, Australian National University (ANU), to deliver an invited lecture titled “Design, Growth, and Fabrication of III-V Semiconductor Nanowire Array-Based Materials, Structures, and Devices.” This report not only showcased Prof. Fu’s team’s cutting-edge research findings in low-dimensional III-V compound semiconductor structures but also delved into their application prospects for the development of next-generation highly integrated photonic/optoelectronic systems and the Internet of Things (IoT).

Prof. Lan Fu is a Professor and Head of the Department of Electronic Materials Engineering at the Research School of Physics, ANU. Her main research interests include the design, fabrication, and integration of optoelectronic devices (such as LEDs, lasers, photodetectors, and solar cells) and chemical sensors based on low-dimensional III-V compound semiconductor structures, including quantum wells, self-assembled quantum dots, and nanowires grown by metal-organic chemical vapor deposition (MOCVD). Prof. Lan Fu has received numerous accolades, including the IEEE Photonic Society Graduate Student Fellowship and Distinguished Lecturer Award, Australian Research Council Postdoctoral Fellowship, ARF/QEII Fellowship, and Future Fellowship. She currently serves as the Chair of the IEEE Nanotechnology Council Chapters & Regional Activities Committee and as an Associate Editor for the IEEE Photonics Journal and Beilstein Journal of Nanotechnology. She is also a member of the Editorial Board for Opto-Electronic Advances and npj Nanophotonics. Additionally, she holds the positions of Vice-Chair of the Australian Academy of Science National Committee on Materials Science and Engineering and Vice-President of the Australian Materials Research Society (AMRS). In 2023, she was recognized by Cosmos Magazine as one of the “50 Women of the Cutting Edge of Science in Australia.”

Prof. Lan Fu began by introducing the attention drawn by III-V compound semiconductor nanowires as nanoscale building blocks for optoelectronic/photonics integration due to their nanoscale size, excellent optical and electrical properties, and strain relaxation ability for lattice-mismatched systems, which enables epitaxial growth of a wide range of high-quality materials and structures. She particularly highlighted the strong geometry-related light-matter interaction properties exhibited by highly uniform, ordered vertical nanowire arrays, offering unique flexibility for designing various geometry-tunable high-performance and multifunctional light emission and detection devices.

In her presentation, Prof. Fu detailed her team’s recent work on the design, growth, and fabrication of III-V semiconductor nanowire array-based materials (such as InP), structures (such as InGaAs/InP quantum wells), and devices (including LEDs, photodetectors, and self-powered photovoltaic gas sensors). These advancements are significant for developing next-generation highly integrated photonic/optoelectronic systems and IoTs.

The invited lecture has a significant inspirational effect on young students. By listening to leading scientists share cutting-edge research results, students can directly engage with frontline scientific questions and technical challenges, stimulating their passion for scientific research. Prof. Lan Fu’s successful career can serve as a role model for young students, encouraging them to strive for excellence in their academic or professional careers. Moreover, the report provides students with opportunities to learn about the most advanced technologies today, broadening their horizons and offering valuable learning resources for future research. It also enhances interdisciplinary awareness, encouraging students to explore diverse research directions and fosters the development of well-rounded talents.

Positive Impact on the Development of the IEEE Association
This lecture not only facilitated exchanges between academia and industry but also provided IEEE members with deep insights into cutting-edge research achievements. Prof. Lan Fu’s work exemplifies the importance of interdisciplinary integration, especially in III-V compound semiconductor nanotechnology and optoelectronics. This can inspire young scientists and attract more talent to engage in relevant research fields. Meanwhile, the technological innovations mentioned in the report promise to spawn a series of efficient and multifunctional next-generation optoelectronic devices, contributing to the realization of a smarter and greener information society. As an important part of IEEE, the NTC Shanghai Chapter will continue to strive to build high-level exchange platforms, promoting cooperation and progress among domestic and international peers.

Semiconductor Nanostructures for Optoelectronics Applications

 

The ninth invited report of IEEE NTC Shanghai Chapter by Prof. Chennupati Jagadish was held on November 1st, 2024.

Biography

Professor Jagadish is a Distinguished Professor and Head of Semiconductor Optoelectronics and Nanotechnology Group in the Research School of Physics, Australian National University. He has received Australia’s highest civilian honor, AC, Companion of the Order of Australia, for his contributions to physics and engineering, in particular nanotechnology. He has received 2023 Pravasi Bharatiya Samman Award, highest award given to overseas Indians by the Government of India, from the President of India. He is currently serving as the President of the Australian Academy of Science and in the past served as President of IEEE Photonics Society, IEEE Nanotechnology Council and Australian Materials Research Society. He has received honorary doctorates from University of Surrey and Nottingham Trent University in July 2024.

Summary of the report

Semiconductors have played an important role in the development of information and communications technology, solar cells, solid state lighting. Nanowires are considered as building blocks for the next generation electronics and optoelectronics. In this talk, I will present the results on growth of nanowires, nanomembranes and microrings and their optical properties. Then I will discuss theoretical design and experimental results on optoelectronic devices. In particular I will discuss nanowire and micro-ring lasers and integration of nanowires and microrings. I will also present the results on polarization sensitive, broad bandwidth THz detectors operating at room temperature. Nanowire based energy devices such as solar cells and photoelectrochemical (PEC) water splitting will be discussed. I will discuss about Neuro-electrodes to study brain signaling to understand dementia. Future prospects of the semiconductor nanostructures will be discussed.

Contact Engineering of Two-Dimensional Schottky Barrier Field-Effect-Transistors

 

The eighth invited report of IEEE NTC Shanghai Chapter by Prof. Jianbin Xu will be held on September 7th, 2024.

Prof. Dr. Xu received his B.Sc. and M.Sc. from Nanjing University in 1983 and 1986, respectively. Since 1988, he was highly privileged to study in the University of Konstanz, particularly under the supervision of Prof. Dr. Klaus Dransfeld. His doctoral dissertation was focused on nanoscopic heat transport associated with electronic processes. He earned his doctorate (Dr.rer.nat.) in 1993. Afterwards, he joined the Department of Electronic Engineering, The Chinese University of Hong Kong. He has been promoted to a Professor in the department since the midst of 2002. He has been named as Choh-Ming Li Professor of Electronic Engineering since August 2022.

Prof. Dr. Xu’ s research interests include nanoscience and nanotechnology for electron devices and micro/nanoelectronics, namely 2D materials and devices; scanning probe techniques for electronics; advanced energy science and technology; interface engineering for materials and devices; physics and technology of organic semiconductors; functional and electronic oxides, etc. He has published c.a. 500 papers in peer-reviewed professional journals and conferences, with c.a. 25000 SCI peer citations, and 30000 Google Scholar citations. Meanwhile, he has secured more than 50 competitive research grants. Also he actively participates in a myriad of professional activities and has served as symposium chair in several international conferences. He is a Fellow of IEEE and Hong Kong Institution of Engineers, and Member of American Physical Society. He is a recipient of Joint Research Fund for Overseas Chinese, Hong Kong and Macau Scholars (formerly Distinguished Young Scholar Fund for Overseas Chinese), awarded by NSFC, a nationally prestigious fund; The Higher Education Outstanding Scientific Research Output Awards (Science and Technology) in the category of Natural Sciences (2nd Class), Ministry of Education, China; Research Excellence Award by The Chinese University of Hong Kong; Vice-Chancellor’s Outstanding Fellow of Faculty of Engineering, The Chinese University of Hong Kong. Also he was Chang Jiang Scholar Chair Professor by Ministry of Education, China. He is currently serving as an Editor of IEEE Transactions on Electron Devices – a flagship journal in the global electron device community, and a Member of Editorial Advisory Board of ACS Nano – a top journal in nanoscience and nanotechnology. Also he has served numerous funding agencies and award committees. He is currently a Member of RGC Engineering Panel for GRF/ECS.

Summary of the report

The increasing complexity and diversity of modern computing systems such as artificial intelligence and distributed computing pose significant challenges for the underlying electronic devices. At the device level, the downscaling of transistors has encountered a barrier due to the physical short-channel effects. At the system level, the data-intensive task has raised challenges in sophisticated heterogeneous integration. However, the Schottky barrier formed at metal- semiconductor interfaces hinders high-performance 2D devices. Nevertheless, the Schottky barrier also presents opportunities to build novel 2D devices, such as runtime-reconfigurable devices, that can overcome traditional device limitations by enabling devices with higher expressive capabilities.

In this study, we focus on designing and fabricating all-2D metal-semiconductor junctions to build high- performance and multifunctional Schottky barrier field-effect transistors (SBFETs), which are expected to develop advanced computing systems.

To minimize Fermi level pinning at the metal-semiconductor interface, we synthesized high-quality 2D semimetal and semiconductors using chemical vapor deposition. We applied the one-pot epitaxial method to grow the high-crystalline 2D metallic WTe2 and systematically investigated its intrinsic contact performance. For the semiconductor side, we successfully used the phase-transition-assisted growth method to prepare the large-scale semiconducting MoTe2. We also proposed a facile solution-treated method, which was able to passivate the surface defects and modulate the electrical contact performance of MoTe2 film.

To overcome the high static energy consumption of SBFETs, we proposed an SBFET with asymmetric graphite and WTe2 van der Waals contacts, enabling reconfigurable transfer polarity and low off-state currents. We successfully suppressed the off-state static leakage power consumption to 10-5 nW under a 1 V of drain bias. The SBFET showed a reversible near-ideal rectifier characteristic with a tuned rectifying ratio. This empowered a reconfigurable bipolar photovoltaic performance and promised a photovoltaic logic inverter application. This polarity-reversible SBFET paved an alternative way to develop reconfigurable 2D devices for low-energy-dissipation and high-efficiency photovoltaic logic circuits.

To integrate the reconfigurable technologies into the in-memory computing device, we fabricated a non- volatile SBFET with the self-gating WTe2 electrode. By integrating the charge-trapping function into the WTe2 contact, the effective Schottky barrier height offset ΔΦB of the SBFET was programmed, providing a multifunctional platform to integrate the nonvolatility and the reconfigurable self-powered photo response. We demonstrated that the reversible open-circuit voltages of the non-volatile SBFET synapse were programmed, and the self-powered responsivity was tuned from +290 mA/W to 50 mA/W, which enables the representation of a signed weight in a single device to enrich multiple optical sensing and computing capabilities.

 

IEEE NTC Shanghai Chapter 2024 Nanotechnology Distinguished Seminar

 

Earth & Space: from Infrared to Terahertz International Conference (ESIT 2023) was successfully held from September 22nd-25th in Shanghai. Gong Huixing, academician of the Chinese Academy of Engineering, Shen Xuezhu, Chu Junhao, Shi Shengcai, academicians of the Chinese Academy of Sciences, and Wang Jianyu, vice chairman of the Shanghai Association for Science and Technology and academician of the Chinese Academy of Sciences, attended the opening ceremony. The conference was co-sponsored by the Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Hangzhou Advanced Research Institute of UCAS, Institute of Optoelectronics, Fudan University, Xu Jianmin Meteorological Satellite Innovation Center, North China Institute of Optoelectronic Technology, Kunming Institute of Physics, and Shanghai Hongkou District Science and Technology Association. More than 400 domestic and foreign experts and scholars from related fields attended the conference, and the opening ceremony was presided over by Hu Weida, executive chairman of the conference, the chair of IEEE NTC Shanghai Chapter, and the head of State Key Laboratory of Infrared Physics.

IEEE NTC Shanghai Chapter 2024 Nanotechnology Distinguished Seminar

Shanghai, June 29th, 2024 – The IEEE Nanotechnology Council (NTC) Shanghai Chapter recently completed its Nanotechnology Distinguished Seminar (NDS), bringing together NTC Shanghai Chapter officers, Shanghai Jiao Tong University professors, Tongji University professors, Anhui University professors, East China Normal University professors, and Shanghai Institute of Technical Physics (SITP), Chinese Academy of Science (CAS) representatives to advance IEEE NTC Shanghai Chapter’s NDS Series and promote communication and commonality within the organization.

During the opening, Weida Hu, the Chair of IEEE NTC Shanghai Chapter, emphasized the importance of technology interconnection and clarified the important impact of the NDS Series on NTC Shanghai Chapter and NTC initiatives. The NDS aims to promote multi-scientific and technological cultural exchanges, break down information barriers, and ultimately achieve collaborative development within the organization.

The seminar featured roundtable discussions and a detailed presentation by Fang Wang from the Shanghai Institute of Technical Physics (SITP) as the Vice Chair of IEEE NTC Shanghai Chapter, Mingsheng Long from Anhui University, Anyuan Gao and Xinghan Cai from Shanghai Jiao Tong University, Tao Jiang and Jin Wang from Tongji University, Xiang Yuan from East China Normal University, and Jin Wang, Fang Zhong, Fuxing Dai from SITP. A series of insightful presentations showcased groundbreaking developments in nanotechnology. Highlights of the talks included:

  • The discovery of three-dimensional Van Hove singularity.
  • Dual quantum spin Hall insulator by density-tuned correlations in TaIrTe4.
  • Nonlinear Nano-Imaging of Interlayer Coupling in 2D Graphene-Semiconductor Heterostructures.
  • High-Sensitive Uncooled Mid-Wave Infrared Detector Based on TiS3Nanoribbon.
  • Next-generation Photodetectors Beyond van der Waals Junctions.

The IEEE NTC Shanghai Chapter Nanotechnology Distinguished Seminar was a great success, making all participants rejoice in their contribution to the synergistic development within IEEE NTC Shanghai Chapter and future endeavors in the field of nanotechnology.

From December 2023 to January 2024, Nanotechnology Distinguished Seminars (NDS) were held three times in the IEEE Nanotechnology Council (NTC) Shanghai Chapter, China. NDS Series are proposed and chaired by Prof. Weida Hu from the Shanghai Institute of Technical Physics (SITP) as the Chair of IEEE NTC Shanghai Chapter with Prof. Ivan Iorsh from lTMO University, Prof. Mario Lanza from the King Abdullah University of Science and Technology and Prof. Wenwu Pan from the University of Western Australia. There were totally 48 participants coming from China, Russia, and Saudi Arabia. NDS Series invited experts with various backgrounds to bring cutting-edge nanotechnology knowledge to our students, break down information barriers, and ultimately achieve collaborative development within the organization. A series of insightful presentations showcased groundbreaking developments in nanotechnology. Highlights of the talks included:

  • Combining two-dimensional semiconductors with metasurfaces.
  • Hybrid 2D/CMOS microchips.
  • Dislocation Filtering Technology for defect reduction on heteroepitaxially-grown semiconductors.

Prof. Ivan Iorsh from lTMO University briefly reviewed their recent results on the light-matter coupling in 2D semiconductors integrated with photonic nanostructures. He also discussed how the realization of strong light-matter coupling might facilitate the suppression of the inhomogeneous broadening of excitons and induce a strong nonlinear optical response. Furthermore, He showed how the excitonic properties can be controlled via strong light-matter coupling and finally discussed how one can exploit strong magnetic proximity effect in order to enable magnetooptics with 2D materials. Prof. Mario Lanza from the King Abdullah University of Science and Technology discussed how to integrate 2D materials in micro/nano-electronic devices, circuits, and microchips, giving a general overview of the global progress achieved in the field and presenting our last developments in hybrid 2D/CMOS applications. He put special emphasis on devices and circuits for memristive technologies, including data storage, computation, encryption, and communication. He also discussed the main technological challenges to face in the next years and provided some recommendations on how to solve them. Prof. Wenwu Pan from the University of Western Australia showed the use of strained CdZnTe/CdTe superlattice layers as dislocation filter layers for the heteroepitaxy of II-VI CdTe buffer layers on lattice-mismatched III-V GaAs substrates. Their experimental results reviewed here suggest that the dislocation filtering technology is a promising approach for achieving high-quality heteroepitaxy of semiconductors on large-area lattice-mismatched substrates, which is crucial for the fabrication of high-performance optoelectronic devices, especially monolithically integrated devices.

The IEEE NTC Shanghai Chapter Nanotechnology Distinguished Seminar Series was a great success, making all participants rejoice in their contribution to the synergistic development within IEEE NTC Shanghai Chapter and future endeavors in the field of nanotechnology.

IEEE NTC Shanghai Chapter Nanotechnology Distinguished Seminar on Dislocation Filtering Technology

The sixth invited report of IEEE NTC Shanghai Chapter by Prof. Wenwu Pan was held on January 25, 2024. Heteroepitaxial growth of semiconductors on high-quality, large-area, commercially available substrates (e.g., Si and GaAs) is an attractive approach for achieving high-performance and cost-effective optoelectronic devices. However, obtaining a buffer layer with low defect density and a desired in-plane lattice constant for subsequent growth of device-grade epilayers remains a major challenge in heteroepitaxy. As a test vehicle, they investigated the use of strained CdZnTe/CdTe superlattice layers as dislocation filter layers for the heteroepitaxy of II-VI CdTe buffer layers on lattice-mismatched III-V GaAs substrates. Their experimental results reviewed here suggest that the dislocation filtering technology is a promising approach for achieving high-quality heteroepitaxy of semiconductors on large-area lattice-mismatched substrates, which is crucial for the fabrication of high-performance optoelectronic devices, especially monolithically integrated devices.

Currently, He is a Research Fellow in the School of Engineering at the University of Western Australia (UWA), mainly working on II-VI semiconductors. He was awarded his Ph.D. degree in Microelectronics and Solid-state Electronics at the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences (SIMIT, CAS) in July 2017. Since his Ph.D. study (2012), he has been working on molecular beam epitaxial (MBE) growth and characterization of semiconductor thin film materials and their applications in optoelectronic devices such as light-emitting diodes, lasers, and detectors. He has published more than 45 peer-reviewed papers and 2 book chapter. Most of the papers have been published in well-respected journals of this field, such as Nano research, ASC photonics, Sci. Rep., Appl. Phys. Lett., J. Appl. Phys., etc.

IEEE NTC Shanghai Chapter Nanotechnology Distinguished Seminar on Hybrid 2D/CMOS Microchips

The fifth invited report of IEEE NTC Shanghai Chapter by Prof. Mario Lanza was held on January 5, 2024. In this talk, Prof. Mario Lanza discussed how to integrate 2D materials in micro/nano-electronic devices, circuits, and microchips, giving a general overview of the global progress achieved in the field and presenting our last developments in hybrid 2D/CMOS applications. He put special emphasis on devices and circuits for memristive technologies, including data storage, computation, encryption, and communication. He also discussed the main technological challenges to face in the next years and provided some recommendations on how to solve them.

Mario Lanza got the PhD in Electronic Engineering (with honors) in 2010 at the Autonomous University of Barcelona. In 2010-2011 he was NSFC postdoctoral fellow at Peking University, and in 2012-2013 he was Marie Curie postdoctoral fellow at Stanford University. In October 2013 he joined Soochow University as Associate Professor, and in March 2017 he was promoted to Full Professor. Since October 2020 he has been an Associate Professor of Materials Science and Engineering at the King Abdullah University of Science and Technology (KAUST, in Saudi Arabia), where he leads a group formed by 10 PhD students and postdocs. His research focuses on how to improve electronic devices and circuits using 2D materials, with special emphasis on resistive switching applications.  Prof. Lanza has published over 185 research articles, including 1 Nature, 2 Science, 6 Nature Electronics and multiple IEDM proceedings (among others), and has registered four patents – one of them granted with 1 million USD. Prof. Lanza has received multiple top distinctions, like the IEEE Fellow, Young 1000 Talent, Marie Curie (among others), and he is a Distinguished Lecturer from the IEEE – Electron Devices Society. Prof. Lanza is the Editor-in-Chief of the journal Microelectronic Engineering (Elsevier), and he serves in the board of many other journals and international conferences, including IEEE-IEDM and IEEE-IRPS.

2023 New Events

IEEE NTC Shanghai Chapter Nanotechnology Distinguished Seminar on Combining Two-dimensional Semiconductors with Metasurfaces

The fourth invited report of IEEE NTC Shanghai Chapter by Prof. Ivan Iorsh was held on December 21, 2023. In the talk, Prof. Ivan Iorsh briefly reviewed their recent results on the light-matter coupling in 2D semiconductors integrated with photonic nanostructures. He also discussed how the realization of strong light-matter coupling might facilitate the suppression of the inhomogeneous broadening of excitons and induce a strong nonlinear optical response. Furthermore, He showed how the excitonic properties can be controlled via strong light-matter coupling and finally discussed how one can exploit strong magnetic proximity effect in order to enable magnetooptics with 2D materials.

Pro. Ivan Iorsh obtained his PhD in 2013 in Durham University. Since 2016 he has been a Professor in lTMO University, Russia. He is the Reviewer of Nature Communications, Physical Review Letters, 2D Materials, New Journal of Physics, Physical Review A, B. His main areas of interest include exciton-polaritons, waveguide and cavity quantum electrodynamics, and light-matter coupling in low-dimensional materials.

IEEE NTC Shanghai Chapter Nanotechnology Distinguished Seminar on Machine Learning

On November 24th, the third invited report of IEEE NTC Shanghai Chapter by Prof. Xiaoying Zhuang was successfully conducted in Shanghai Institute of Technical Physics(SITP), Chinese Academy of Science(CAS). Prof. Xiaoying Zhuang, from Leibniz University Hannover, who served as Chair of Computational Science and Simulation Technology, presented a report focusing on machine learning based multiscale exploration and characterization of 2D materials. The team of Prof. Xiaoying Zhuang developed machine-learning interatomic potentials(MLIPs) passively fitted to computationally inexpensive ab-initio datasets which can be to evaluate the complex physical properties of nanostructured materials, with only a fractional computational cost of conventional DFT-based solutions, cutting down from months to tens of hours. MLIPs offer extraordinary capabilities to marry the first-principles accuracy with multiscale modeling and thus enable the modeling of complex nanostructures at continuum level and has flexibility without paying unaffordable computational costs. Their works show outstanding and robust potential to develop fully automated platforms, to design, optimize, and explore various properties of 2D materials and structures at continuum level, and with inherent precision and robustness. The presentation was successful and many other experts including Prof. Weida Hu (Chair of IEEE NTC Shanghai Chapter), Dr. Fang Wang, Dr. Tiange Zhao, and Dr. Kun Zhang all joined in and had a heated discussion on the topic.

IEEE NTC Shanghai Chapter Nanotechnology Distinguished Seminar on Infrared Spectral Sensing and Imaging

On September 25th, the second invited report of IEEE NTC Shanghai Chapter by Prof. Lorenzo Faraone was successfully conducted in Shanghai Institute of Technical Physics(SITP), Chinese Academy of Science(CAS). Prof. Lorenzo Faraone, from University of Western Australia, served as a member of the Order of Australia, and a fellow of the IEEE, the Australian Academy of Science and the Australian Academy of Technological Sciences Engineering, presented a report focusing on well-established HgCdTe-based technologies. Besides, the presentation also described MEMS-based tuneable filter technologies suitable for on-chip integration that can provide a low size, weight and power solution for multi-spectral sensing and imaging. The presentation was successful and many other experts including Prof. Weida Hu (Chair of IEEE NTC Shanghai Chapter), Dr. Fang Wang, Dr. Zhen Wang and Dr. Haonan Ge all joined in and had a heated discussion on the topic.

ESIT 2023 Earth & Space: from Infrared to Terahertz International Conference (ESIT 2023)

Earth & Space: from Infrared to Terahertz International Conference (ESIT 2023) was successfully held from September 22nd-25th in Shanghai. Gong Huixing, academician of the Chinese Academy of Engineering, Shen Xuezhu, Chu Junhao, Shi Shengcai, academicians of the Chinese Academy of Sciences, and Wang Jianyu, vice chairman of the Shanghai Association for Science and Technology and academician of the Chinese Academy of Sciences, attended the opening ceremony. The conference was co-sponsored by the Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Hangzhou Advanced Research Institute of UCAS, Institute of Optoelectronics, Fudan University, Xu Jianmin Meteorological Satellite Innovation Center, North China Institute of Optoelectronic Technology, Kunming Institute of Physics, and Shanghai Hongkou District Science and Technology Association. More than 400 domestic and foreign experts and scholars from related fields attended the conference, and the opening ceremony was presided over by Hu Weida, executive chairman of the conference, the chair of IEEE NTC Shanghai Chapter, and the head of State Key Laboratory of Infrared Physics.

IEEE-NANO 2023

The 23rd IEEE International Conference on Nanotechnology (IEEE-NANO 2023) was successfully held from July 2-5, 2023 at Jeju Island, Korea. The conference focused on the promotion of advanced research in the fields of nanoscience and nanotechnology. Prof. Weida Hu (Chair of Shanghai NTC Chapter) from Shanghai Institute of Technical Physics, Chinese Academy of Sciences was invited as the keynote speaker at the conference to present a report about Nanoscale Photodetectors for Infrared Sensing and Intelligent Recognition. In addition, the Special Invited Session 18 (SIS18) co-organized by Weida Hu and Jinshui Miao focued on nanoscale photodetectors and intelligent perceptions and was innovative. The SIS18 has achieved a great success and showed many excellent reports from Prof. Sanhong Bei, Prof. Deep Jariwala, Prof. Lan Fu, Prof Jinshui Miao, Dr. Zhen Wang, Dr. Runzhang Xie and so on.

 

IEEE NANO Shanghai Chapter Nanotechnology Distinguished Seminar

On June 16th, the first invited report of IEEE NTC Shanghai Chapter Nanotechnology Distinguished Seminar by Dr, Wang Jingfan was successfully conducted in Shanghai Institute of Technical Physics(SITP), Chinese Academy of Science(CAS). Dr. Wang Jingfan, served as an industry supervisor of professional gradudate degree of Zhejiang University and an off-campus supervisor of Chinese University of HongKong (Shenzhen), presented a report focus on large models ChatGPT and the future of AI robots. He introduced different application exploration of AI fusion humanoid robot technology in multiple scenarios and possible development of artificial intelligence. Other exports including Weida Hu(Chairman of IEEE NTC Shanghai Chapter), Yuzhi Shi, Yi Zhou,GangChen, Yueming Wang and Fanshen Chen from IEEE Nano Shanghai  Chapter, Tongji University and SITP all joined hot discussion of topics.